GaN/AlGaN strain-balanced heterostructures for near-IR quantum well photodetectors: Final report Contract: FA8655-02-M4006

This is the final report for a 1-year project funded by the European Office of Research and Development (EOARD). In this work GaN/AlGaN strain-balanced heterostructures have been designed for near-infrared absorption through intersubband transitions. By making use of existing collaborations with workers at the University of Sheffield and UMIST the semiconductor samples have been grown, characterised and fabricated into devices. The experimental results have been used to validate the design procedure and the prototype devices resulting from these collaborations are the first quantum well infrared photodetectors based in the GaN material system to be reported.